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SPI NAND Flash

FEATURES
■ X8 I/O BUS

－ NAND Interface

－ ADDRESS / DATA Multiplexing
■ SUPPLY VOLTAGE

－ VCC = 2.7-3.6 Volt core supply voltage for Program, Erase and Read operations
■ PAGE READ / PROGRAM

－ X8: (2048+64 spare) byte

－ Synchronous Page Read Operation

－ Random access: 25us (Max)

－ Serial access: 25ns (2.7/3.0V)

－ Page program time: 300us (Typ)
■ PAGE COPY BACK

－ Fast data copy without external buffering
■ CACHE PROGRAM

－ Internal buffer to improve the program throughput
■ READ CACHE
■ LEGACY/ONFI 1.0 COMMAND SET
■ FAST BLOCK ERASE

－ Block size (X8): (128K + 4K) bytes

－ Block erase time: 2ms (Typ)
■ MEMORY CELL ARRAY

－ X8: (2K + 64) bytes x 64 pages x 1024 blocks

■ ELECTRONIC SIGNATURE

－ Manufacturer Code

－ Device Code
■ STATUS REGISTER
■ HARDWARE DATA PROTECTION
■ DATA RETENTION

－ 50K Program / Erase cycles

－ Data retention: 10 Years (4bit/512byte ECC)

－ Block zero is a valid block and will be valid for at lea

Type	Part Number	Density	Voltage（V）	Speed（MHz/CLK)	Temp.Range	PKG Type
SPI NAND	FMND1G08S3D-ID	1G	1.8V	45ns	-40℃-85℃	VFBGA63(9*11mm)
	FMND1G08S3D-IF				-40℃-85℃	VFGBA67(6.5*8mm)
	FMND1G08S3D-IW				-40℃-85℃	KGD
	FMND1G08U3D-IA		3.3V	25ns	-40℃-85℃	TSOP48(12*20mm)
	FMND1G08U3D-ID				-40℃-85℃	VFBGA63(9*11mm)
	FMND1G08U3D-IF				-40℃-85℃	VFBGA63(9*11mm)
	FMND1G08U3D-IW				-40℃-85℃	KGD
	FMND2G08S3D-ID	2G	1.8V	45ns	-40℃-85℃	VFBGA63(9*11mm)
	FMND2G08S3D-IF				-40℃-85℃	VFGBA67(6.5*8mm)
	FMND2G08S3D-IW				-40℃-85℃	KGD
	FMND2G08U3D-IA		3.3V	25ns	-40℃-85℃	TSOP48(12*20mm)
	FMND2G08S3D-ID				-40℃-85℃	VFBGA63(9*11mm)
	FMND2G08S3D-IF				-40℃-85℃	VFGBA67(6.5*8mm)
	FMND2G08S3D-IW				-40℃-85℃	KGD
	FMND4G08U3J-IA	4G	3.3V	25ns	-40℃-85℃	TSOP48(12*20mm)
	FMND4G08U3J-ID	4G	3.3V	25ns	-40℃-85℃	VFBGA63(9*11mm)