产品中心
MD18624N 5-A 峰值高频双通道MOS驱动器
The MD18624N high-frequency gate driver is
designed to drive both low-side N-Channel
MOSFETs with maximum control flexibility of
independent inputs.
Each channel can source and sink 5A peak
current along with rail-to-rail output capability.
Lessthan 10nsrise and fall time with 2.2nF load
decrease the switching loss of MOSFET.
MD18624N has 11ns rising and falling
propagation delay which allows the systems
operating at high frequency with less delay
matching variations. These delays are very
suited for applications requiring dual-gate
drivers with critical timing, such as
synchronous rectifiers. When connecting two
channels in parallel to increase current-drive
capability, intelligent stack detection circuit is
implemented to add extra 5ns dead-time
between the two channels to avoid shoot
through current without adding external series
resistor.
The inputs can handle -10V to 20V PWM, which
increases robustness against ringing from gate
transform
客服邮箱
在线客服
扫描关注信立诚微信
扫描关注信立诚微博
