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马达驱动高低边驱动

MD18624-Q1 5-A Peak, High Frequency, Dual Low-Side Driver

The MD18624-Q1 high-frequency gate driver is
designed to drive both low-side N-Channel
MOSFETs with maximum control flexibility of
independent inputs.
Each channel can source and sink 5A peak
current along with rail-to-rail output capability.
Lessthan 10nsrise and fall time with 2.2nF load
decrease the switching loss of MOSFET.
MD18624-Q1 has 11ns rising and falling
propagation delay which allows the systems
operating at high frequency with less delay
matching variations. These delays are very
suited for applications requiring dual-gate
drivers with critical timing, such as
synchronous rectifiers. When connecting two
channels in parallel to increase current-drive
capability, intelligent stack detection circuit is
implemented to add extra 5ns dead-time
between the two channels to avoid shoot
through current without adding external series
resistor.
The inputs can handle -10V to 20V PWM, which
increases robustness against ringing from gate
trans

• Qualified for Automotive Applications
• AEC-Q100 Qualified with the Following
Results
- Device Temperature Grade 1
- Device HBM ESD Classification Level H2
- Device CDM ESD Classification Level C4B
• 4.5V to 26V VDD Operating Range, 28V ABS
MAX
• Input Pins Can Tolerate -10V to +26V, and
are Independent of Supply Voltage Range
• Operating Switching Frequency up to 1MHz
• 5-A Source and Sink Output Peak Currents
• Less than 10ns Rise and Fall Time with 2.2nF
Load
• Fast Propagation Delay (11ns Typical)
• Excellent Propagation Delay Matching (1ns
Typical)
• TTL and CMOS Compatible Inputs
• Symmetrical Undervoltage Lockout for
Channel A and Channel B
• Industry-standard-compatible Pinout
• Specified from -40°C to 140°C