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ZD35Q1GC-IB 1Gb

The ZD35Q1GC is 1G-bit with spare 64Mbit capacity. The device is offered in 3.3V power supply. Its
NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory
is divided into blocks that can be erased independently so it possible to preserve valid data while old
data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND
structures of 32series connected Flash Cells. A program operation can be performed in typical 400us on
the 2048-bytes and an erase operation can be performed in typical 2ms on a 128K-bytes block. The on- chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of
the ZD35Q1GC’s extended reliability of 100K program/erase cycles by providing ECC (Error Correction
Code) with real time mapping-out algorithm. ZD35Q1GC features a serial periphera

Overview
1.1 Feature
1G-bit SPI NAND FLASH
Page size : (2K+64spare) bytes
Block size : (128K+4K) bytes
Device size: 1024 blocks
Advanced Security Features
8K-Byte OTP region
Support Standard, Dual, and Quad SPI
Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
Dual SPI: SCLK, CS#, SIO0, SIO1, WP#,
HOLD#
Quad SPI: SCLK, CS#, SIO0, SIO1, SIO2, SIO3
High Clock Frequency
Quad I/O data transfer up to 320Mbits/s
2048/64/16 wrap read option
Program/Erase/Read Cycle Time
Page read time: 250us Maximum(w/I ECC)
Page program time: 400us typical
Block erase time: 2ms typical