MD18624N 5-A 峰值高频双通道MOS驱动器

The MD18624N high-frequency gate driver is
designed to drive both low-side N-Channel 
MOSFETs with maximum control flexibility of 
independent inputs. 
Each channel can source and sink 5A peak 
current along with rail-to-rail output capability. 
Lessthan 10nsrise and fall time with 2.2nF load 
decrease the switching loss of MOSFET. 
MD18624N has 11ns rising and falling 
propagation delay which allows the systems 
operating at high frequency with less delay 
matching variations. These delays are very 
suited for applications requiring dual-gate 
drivers with critical timing, such as 
synchronous rectifiers. When connecting two 
channels in parallel to increase current-drive 
capability, intelligent stack detection circuit is 
implemented to add extra 5ns dead-time 
between the two channels to avoid shoot 
through current without adding external series 
resistor.
The inputs can handle -10V to 20V PWM, which 
increases robustness against ringing from gate 
transform

TYPICAL APPLICATIONS
• Power Supplies for Telecom, Datacom, and
48V to 72V Battery Powered Systems
• Switch-Mode Power Supplies
• Motor Control, Solar Power
FEATURES
• 4.5V to 26V VDD Operating Range, 28V ABS
MAX
• Input Pins Can Tolerate -10V to +26V, and
are Independent of Supply Voltage Range
• Operating Switching Frequency up to 1MHz
• 5-A Source and Sink Output Peak Currents
• Less than 10ns Rise and Fall Time with 2.2nF
Load
• Fast Propagation Delay (11ns Typical)
• Excellent Propagation Delay Matching (1ns
Typical)
• TTL and CMOS Compatible Inputs
• Symmetrical Undervoltage Lockout for
Channel A and Channel B
• Industry-standard-compatible Pinout
• Available in SOP-8 Package
• Specified from -40°C to 140°C
返回列表

在线客服

关 闭